Semiconductor device having a complementary field effect transistor

ABSTRACT

A semiconductor device prevents the ON current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a buffer circuit that generates a power-supply voltage of a CMOS; a first replica transistor that is a replica of a p-channel MOS transistor forming the CMOS, and is diode-connected; a second replica transistor that is a replica of an n-channel MOS transistor forming the CMOS, and is diode-connected; and a voltage controller that controls the voltage between the anode and cathode of the replica transistors so that the current value of the current flowing into the replica transistor becomes equal to a given target value. In this semiconductor device, the buffer circuit generates the power-supply voltage, with the target voltage being a voltage that is controlled by the voltage controller.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device, and moreparticularly, to a semiconductor device that can restrict fluctuationsof the ON current of a complementary field effect transistor.

2. Description of Related Art

In semiconductor devices such as a DRAM (Dynamic Random Access Memory),complementary field effect transistors such as a CMOS (ComplementaryMetal Oxide Semiconductor) are often used for peripheral circuits (seeJapanese Patent Application Laid-Open No. 2008-059680, for example).

In recent years, miniaturization and lowering of voltage are beingrapidly achieved in the development of semiconductor devices. As theminiaturization and the lowering of voltage progress, the variationsamong the threshold voltages of the transistors forming complementaryfield effect transistors become larger, and the fluctuation of the ONcurrent becomes larger accordingly. Also, due to the lowering of thethreshold voltage, the OFF current of the entire chip cannot be ignored,and the fluctuations of the OFF current adversely affect the standbycurrent.

SUMMARY

In one embodiment, there is provided a semiconductor device comprising:a buffer circuit that generates a power-supply voltage of acomplementary field effect transistor circuit including a first fieldeffect transistor of a first conductivity type and a second field effecttransistor of a second conductivity type; a first replica transistorthat is a replica of the first field effect transistor, the firstreplica transistor being diode-connected; a second replica transistorthat is a replica of the second field effect transistor, the secondreplica transistor being diode-connected; and a voltage control circuitthat controls a voltage between an anode and a cathode shared by thefirst and second replica transistors in such a manner that a totalcurrent value of currents flowing in the first and second replicatransistors becomes equal to a predetermined first target value, whereinthe buffer circuit generates the power-supply voltage, with a targetvoltage being the voltage between the anode and cathode controlled bythe voltage control circuit.

In another embodiment, there is provided a semiconductor devicecomprising: a buffer circuit that generates a power-supply voltage of acomplementary field effect transistor circuit including a first fieldeffect transistor of a first conductivity type and a second field effecttransistor of a second conductivity type; a first replica transistorthat is a replica of the first field effect transistor, the firstreplica transistor being diode-connected; a second replica transistorthat is a replica of the second field effect transistor, the secondreplica transistor being diode-connected; a noninverting amplifier thatincludes first and second input terminals, a first output terminal, anda feedback resistor inserted between the first output terminal and thesecond input terminal; a comparator that includes third and fourth inputterminals and a second output terminal; and a first input voltagegenerating circuit that generates a voltage that appears in the firstoutput terminal when a total current value of currents flowing in thefirst and second replica transistors is equal to a predetermined firsttarget value, the first input voltage generating circuit outputting thevoltage to the third input terminal, wherein the first input terminaland the second output terminal are connected to each other, and thefirst output terminal and the fourth input terminal are connected toeach other, the first and second replica transistors are inserted in aforward direction and in parallel between the second input terminal anda ground, and the buffer circuit generates the power-supply voltage,with a target voltage being a voltage that is output from the secondoutput terminal.

According to the present invention, variations of the ON current ofcomplementary field effect transistors among products can be reduced,and fluctuations of the ON current of the complementary field effecttransistors due to changes in ambient temperature can be restricted.

BRIEF DESCRIPTION OF THE DRAWINGS

The above features and advantages of the present invention will be moreapparent from the following description of certain preferred embodimentstaken in conjunction with the accompanying drawings, in which:

FIG. 1 is a functional block diagram of a semiconductor device accordingto a preferred embodiment of the present invention;

FIG. 2 is a graph showing the characteristics of the drain current of aMOS transistor with respect to the gate-source voltage;

FIG. 3 is a schematic block diagram showing the functional blocks of theVPERI control circuit according to a preferred embodiment of the presentinvention;

FIG. 4 is a circuit diagram of the VPERI control circuit according to apreferred embodiment of the present invention;

FIG. 5A is a circuit diagram of a constant current circuit for supplyinga constant voltage to an operational amplifier used in a semiconductordevice according to a preferred embodiment of the present invention;

FIG. 5B is a circuit diagram showing the internal structure of anoperational amplifier used in a semiconductor device according to apreferred embodiment of the present invention;

FIG. 6 is a circuit diagram of a VPERI control circuit according to afirst modification of a preferred embodiment of the present invention;

FIG. 7 is a schematic block diagram showing the functional blocks of aVPERI control circuit according to a second modification of a preferredembodiment of the present invention;

FIG. 8 is a circuit diagram of a VPERI control circuit according to asecond modification of a preferred embodiment of the present invention;

FIG. 9 is a schematic block diagram showing the functional blocks of theVPW control circuit according to a preferred embodiment of the presentinvention;

FIG. 10 is a circuit diagram of the VPW control circuit according to apreferred embodiment of the present invention;

FIG. 11 is a graph showing an example of a result of a control operationperformed on the substrate voltage by the VPW control circuit accordingto a preferred embodiment of the present invention;

FIG. 12 is a schematic block diagram showing the functional blocks ofthe VNW control circuit according to a preferred embodiment of thepresent invention;

FIG. 13 is a circuit diagram of the VNW control circuit according to apreferred embodiment of the present invention; and

FIG. 14 is a graph showing an example of a result of a control operationperformed on the substrate voltage by the VNW control circuit accordingto preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will now be explained indetail with reference to the drawings.

FIG. 1 is a functional block diagram of a semiconductor device 1according to a preferred embodiment of the present invention.

As shown in FIG. 1, the semiconductor device 1 according to thisembodiment includes a peripheral circuit including a complementary fieldeffect transistor, and a VPERI control circuit 2, a VPW control circuit3, and a VNW control circuit 4 that supply voltage to the complementaryfield effect transistor and the like.

Specific examples of the semiconductor device 1 include semiconductormemories such as a DRAM and a PRAM, and logic semiconductor devices suchas processors. Where the semiconductor device 1 is a DRAM, theperipheral circuit is a circuit that is placed near a memory cell array,and includes a row decoder, a column decoder, and the like.

The complementary field effect transistor is a transistor that is formedwith a first field effect transistor of a first conductivity type and asecond field effect transistor of a second conductivity type. Althoughnot particularly limited to this, the complementary field effecttransistor, the first field effect transistor, and the second fieldeffect transistor in the following description are a CMOS 1 c, ann-channel MOS transistor 1 n, and a p-channel MOS transistor 1,respectively, as shown in FIG. 1. The CMOS 1 c has a structure in whichthe p-channel MOS transistor 1 p and the n-channel MOS transistor 1 nare connected in series in this order between a power-supply wiring 1 ato which a power-supply voltage VPERI is supplied and a ground (thewiring to which an external ground voltage VSS is supplied; this alsoapplies in the later description), as shown in FIG. 1. Although only oneCMOS is shown in FIG. 1, the peripheral circuit includes a large numberof chained CMOSs in reality.

The VPERI control circuit 2 is a circuit that supplies the power-supplyvoltage VPERI of the CMOS 1 c. The power-supply voltage VPERI is avoltage of approximately 1.0 V to 1.3 V, if the minimum processing sizeof the semiconductor device 1 is in the range of 40 nm to 50 nm, forexample. The power-supply voltage VPERI is supplied to the drain of thep-channel MOS transistor 1 p. The VPERI control circuit 2 has a functionto maintain the current value of the ON current of the CMOS 1 c at agiven target value I₁ (the first target value, which is 100 μA, forexample), regardless of ambient temperature. More specifically, thecurrent value of the ON current of the CMOS 1 c varies not only withambient temperature but also with the voltage value of the power-supplyvoltage VPERI, but the VPERI control circuit 2 takes advantage of suchcharacteristics of the ON current to control the voltage value of thepower-supply voltage VPERI so that the current value of the ON currentof the CMOS 1 c stays at the target value I₁.

The VPW control circuit 3 and the VNW control circuit 4 are circuitsthat supply a substrate voltage VPW of the n-channel MOS transistor 1 nand a substrate voltage VNW of the p-channel MOS transistor 1 p,respectively. The VPW control circuit 3 and the VNW control circuit 4each have a function to maintain the current value of the OFF current ofthe corresponding MOS at a given target value I₂ (the second targetvalue, which is 0.1 μA, for example) or I₃ (the third target value,which is 0.1 μA, for example), regardless of ambient temperature. Morespecifically, the current value of the OFF current of each MOStransistor varies not only with ambient temperature but also with thevoltage value of the corresponding substrate voltage. However, the VPWcontrol circuit 3 and the VNW control circuit 4 each take advantage ofsuch characteristics of the OFF current. The VPW control circuit 3 andthe VNW control circuit 4 each control the voltage value of thecorresponding substrate voltage so that the current value of the OFFcurrent of the corresponding MOS transistor stays at the target value I₂or I₃.

FIG. 2 is a graph showing the characteristics of the drain current of aMOS transistor with respect to the gate-source voltage. The samecharacteristics are obtained with either an n-channel MOS transistor ora p-channel MOS transistor. The ordinate axis is the logarithmic axis.The “weak inversion region” shown in FIG. 2 is the gate-source voltagevalue region where the MOS transistor is in an OFF state. The “stronginversion region” is the gate-source voltage value region where the MOStransistor is in an ON state. As shown in FIG. 2, a very weak draincurrent (OFF current) is flowing in the MOS transistor even in an OFFstate. In this specification, “OFF” indicates electric nonconductivity,and are also referred to as an “OFF current”, an “OFF state”, or thelike. Meanwhile, “ON” indicates electric conductivity, and are alsoreferred to as an “ON current”, an “ON state”, or the like.

The characteristics of the drain current with respect to the gate-sourcevoltage vary with temperature. FIG. 2 shows characteristicscorresponding to three temperatures T1, T2, and T3 (T1<T2<T3). As can beseen from those characteristics, in the “weak inversion region”, thedrain current (the OFF current) becomes larger as the temperaturebecomes higher. In the “strong inversion region”, on the other hand, thedrain current (the ON current) becomes smaller as the temperaturebecomes higher. In other words, the drain current has positivetemperature characteristics in the “weak inversion region”, and hasnegative temperature characteristics in the “strong inversion region”.Furthermore, the change with respect to the gate-source voltage is asquared change in the “strong inversion region”, while the change withrespect to the gate-source voltage is an exponential change in the “weakinversion region”. This means that the ON current of the “stronginversion region” and the OFF current of the “weak inversion region”need to be controlled in different manners from each other. Morespecifically, the ON current having low sensitivity to the thresholdvoltage needs to be controlled with the voltage VPERI, and the OFFcurrent having high sensitivity to the threshold voltage needs to becontrolled with the control substrate voltage.

The VPERI control circuit 2, the VPW control circuit 3, and the VNWcontrol circuit 4 compensate for the variations among the products andthe temperature dependence of the characteristics of the drain currentwith respect to the gate-source voltage, so as to obtain an almostconstant drain current, regardless of the variations among the productsand temperature.

In the following, each of the VPERI control circuit 2, the VPW controlcircuit 3, and the VNW control circuit 4 is described in detailsuccessively.

FIG. 3 is a schematic block diagram showing the functional blocks of theVPERI control circuit 2. FIG. 4 is a circuit diagram of the VPERIcontrol circuit 2. As shown in FIG. 3, the VPERI control circuit 2includes a buffer circuit 21, replica transistors 22 and 23, and avoltage controller 24.

The buffer circuit 21 is a circuit that generates the power-supplyvoltage VPERI of the CMOS 1 c, with the target voltage being a voltageVPERIR (described later) controlled by the voltage controller 24. Morespecifically, as shown in FIG. 4, the buffer circuit 21 includes ann-channel MOS transistor 21 n connected between a power-supply wiring towhich an external power-supply voltage VDD is supplied and the abovedescribed power-supply wiring 1 a. The buffer circuit 21 also includes acomparator A23. The power-supply voltage VPERI is supplied to thepower-supply wiring 1 a.

The inverting input terminal of the comparator A23 is connected to thepower-supply wiring 1 a, and receives the voltage VPERI generated fromthe buffer circuit 21. The voltage VPERIR (described later) is suppliedfrom the voltage controller 24 (or a target voltage generator 26) to thenoninverting input terminal of the comparator A23. Accordingly, thecomparator A23 compares the voltage VPERI with the voltage VPERIR. Ifthe voltage VPERI is lower than the voltage VPERIR, the comparator A23outputs a high-level signal. If the voltage VPERI is higher than thevoltage VPERIR, the comparator A23 outputs a low-level signal. As aresult, when the voltage VPERI becomes lower than the voltage VPERIR,the transistor 21 n is put into an ON state, and the power-supply wiring1 a is connected to the external power-supply voltage VDD. Accordingly,the potential of the power-supply wiring 1 a gradually becomes higher.On the other hand, when the voltage VPERI becomes higher than thevoltage VPERIR, the transistor 21 n is put into an OFF state, and thepower-supply wiring 1 a is disconnected from the external power-supplyvoltage VDD. Accordingly, the potential of the power-supply wiring 1 agradually becomes lower. Through the above operation, the potential ofthe power-supply wiring 1 a becomes equal to the voltage VPERIR at last.A potential having a predetermined ratio to the potential of the voltageVPERI may be input to the inverting input terminal of the comparatorA23.

Instead of the buffer circuit 21, a buffer circuit 51 described laterwith reference to FIG. 8 may be used. This aspect will be described indetail when the buffer circuit 51 is explained.

The replica transistor 22 (the first replica transistor) is a replica ofthe p-channel MOS transistor 1 p shown in FIG. 1. A replica is astructure that has the same impurity profile, the same W/L ratio, thesame gate insulating film thickness as the original, and is formed onthe same substrate or a substrate having the same impurity density asthe original. As shown in FIG. 3 and others, the replica transistor 22is diode-connected, and is forward-connected between the voltagecontroller 24 and the ground. More specifically, the anode of thereplica transistor 22 is connected to the voltage controller 24, and thecathode of the replica transistor 22 is grounded. The W/L represents thechannel width/channel length, and indicates the transistor size. Thechannel width (W) is related to the total amount of current, and thechannel length (L) is related to the amount of current per circuit area.More specifically, “L” represents the distance between the drain and thesource of the transistor, and relates to the direction of the currentflowing between the drain and source terminals. Meanwhile, “W”determines the total amount of current flowing in the transistor.

The replica transistor 23 (the second replica transistor) is a replicaof the n-channel MOS transistor 1 n shown in FIG. 1. As shown in FIG. 3and others, the replica transistor 23 is also diode-connected, and isforward-connected between the voltage controller 24 and the ground. Morespecifically, the anode of the replica transistor 23 is connected to thevoltage controller 24, and the cathode of the replica transistor 23 isgrounded. The replica transistor 22 and the replica transistor 23 areconnected in parallel between the voltage controller 24 and the ground.

The voltage controller 24 (the voltage control circuit) controls thevoltage between the anode and cathode of the replica transistors 22 and23, so that the forward current I (the ON current) flowing in thereplica transistors 22 and 23 becomes equal to the target value I₁. Theforward current I (the ON current) is the total current flow (theaggregate current) of the currents flowing in the replica transistors 22and 23. In the following, the structure and operation of the voltagecontroller 24 are described in detail.

First, the structure of the voltage controller 24 is described.

As shown in FIG. 3, a voltage applier 25, the target voltage generator26, and an input voltage generator 27 are provided inside the voltagecontroller 24. As shown in FIG. 4, the voltage applier 25 (the firstvoltage applying circuit) includes a noninverting amplifier A21 that isformed with an operational amplifier 25 o having input terminals i1 andi2 and an output terminal o1, and a feedback resistor 25 r of aresistance value R₁. The input terminal i1 is a noninverting inputterminal, and the input terminal i2 is an inverting input terminal. Thefeedback resistor 25 r is inserted between the output terminal o1 andthe input terminal i2. The input terminal i2 is connected to the anodeof the replica transistors 22 and 23.

The target voltage generator 26 (the target voltage generating circuit)includes a comparator A22 having input terminals i3 and i4 and an outputterminal o2, as shown in FIG. 4. The input terminal i3 is a noninvertinginput terminal, and the input terminal i4 is an inverting inputterminal. The input terminal i4 is connected to the output terminal o1of the voltage applier 25, and the output terminal o2 is connected tothe noninverting input terminal of the comparator A23 in the buffercircuit 21.

As shown in FIG. 4, the input voltage generator 27 (the first inputvoltage generating circuit) includes a voltage follower A24 that isformed with an operational amplifier 27 o-1, a noninverting amplifierA25 that is formed with an operational amplifier 27 o-2, an inputresistor 27 r-1, and a feedback resistor 27 r-2, and a noninvertingamplifier A26 that is formed with an operational amplifier 27 o-3, aninput resistor 27 r-3, and a feedback resistor 27 r-4.

The inverting input terminal and the output terminal of the operationalamplifier 27 o-1 are connected to each other. A voltage VR that isgenerated from a bandgap circuit (not shown) generating asubstance-specific constant potential is supplied to the noninvertinginput terminal of the operational amplifier 27 o-1. Generated from thebandgap circuit, the voltage VR has very low temperature dependence. Avoltage VPERIR/2 that is half the size of the voltage VPERIR generatedfrom the target voltage generator 26 is supplied to the noninvertinginput terminal of the operational amplifier 27 o-2. The voltage VPERIRgenerated from the target voltage generator 26 is supplied to thenoninverting input terminal of the operational amplifier 27 o-3. Theoutput terminal of the operational amplifier 27 o-1 and the invertinginput terminal of the operational amplifier 27 o-2 are connected to eachother via the input resistor 27 r-1. The output terminal of theoperational amplifier 27 o-2 and the inverting input terminal of theoperational amplifier 27 o-3 are connected to each other via the inputresistor 27 r-3. The output of the noninverting amplifier A26 is alsothe output of the input voltage generator 27, and is supplied to theinput terminal i3 of the target voltage generator 26. The resistors 27r-1 through 27 r-4 have the same resistance values.

In addition to the above components, the voltage controller 24 includesa phase compensating circuit 28 that is inserted between the ground andthe wiring connecting the input terminal it and the output terminal o2,as shown in FIG. 4. In this embodiment, a resistive element and acapacitive element connected in series are used as a specific example ofthe phase compensating circuit 28.

Next, the operation of the voltage controller 24 is described.

The voltage applier 25 applies the voltage VPERIR between the anode andcathode of the replica transistors 22 and 23. More specifically, thevoltage of the input terminal i2 becomes equal to the voltage of theinput terminal i1, because of virtual short-circuiting of theoperational amplifier 25 o. Since the voltage VPERIR generated by thetarget voltage generator 26 is input to the input terminal i1, thevoltage of the input terminal i2 becomes equal to the voltage VPERIR.Accordingly, the voltage VPERIR is applied to the anode of the replicatransistors 22 and 23. Since the cathode of the replica transistors 22and 23 is grounded, the anode-cathode voltage of the replica transistors22 and 23 becomes equal to the voltage VPERIR.

By virtue of the voltage VPERIR applied between the anode and cathode,the forward current I (the ON current) in accordance with the voltageVPERIR flows in the replica transistors 22 and 23. With the current Iflowing, a voltage having a voltage value VPERIR+I×R₁ appears in theoutput terminal o1 of the voltage applier 25. The voltage VPERIR+I×R₁ isinput to the input terminal i4 of the target voltage generator 26.

The input voltage generator 27 is the circuit that generates the inputvoltage of the input terminal i3 of the target voltage generator 26.This input voltage is the output voltage of the output terminal o1 thatis determined in accordance with the above described target value I₁(the target value of the current value of the ON current flowing in thereplica transistors 22 and 23). In other words, the above input voltageis the voltage that appears in the output terminal o1 when the currentvalue of the forward current of the replica transistors and 23 becomesequal to the target value I₁. Accordingly, the input voltage isVPERIR+I₁×R₁.

The specific voltage value of the above described voltage VR is set atI₁×R₁, and the input voltage generator 27 generates the above inputvoltage VPERIR+I₁×R₁ from the voltage VR. More specifically, the voltagefollower A24 first receives an input of the voltage VR, and supplies acurrent to the noninverting amplifier A25, with the input impedancebeing infinite. Since the voltage amplification factor of the voltagefollower A24 is ×1, the voltage to be supplied to the noninvertingamplifier A25 remains the voltage VR.

The noninverting amplifiers A25 and A26 form a level-shift circuit thatshifts the level of the voltage VR that is input from the voltagefollower A24, based on the voltage VPERIR. More specifically, in thenoninverting amplifiers A25 and A26, a voltage −V⁻+2×V₊ appears in theoutput terminals, where the voltages to be input to each inverting inputterminal and each noninverting input terminal are V⁻ and V₊,respectively. Accordingly, the output voltages of the noninvertingamplifiers A25 and A26 are voltages VPERIR−I₁×R₁ and VPERIR+I₁×R₁,respectively, as shown in FIG. 4.

Based on the difference between the target value I₁ and the current Iflowing in the replica transistors 22 and 23, the target voltagegenerator 26 generates the voltage VPERIR that is the target voltage ofthe voltage control of the buffer circuit 21. In other words, the targetvoltage generator 26 generates the voltage VPERIR, based on the voltageVPERIR+I₁×R₁ that is input from the input voltage generator 27 to theinput terminal i3 and the output voltage (the voltage that is input tothe input terminal i4) VPERIR+I×R₁ of the voltage applier 25.

More specifically, in accordance with the difference I₁×R₁−I×R₁ betweenthe voltage VPERIR+I₁×R₁ and the voltage VPERIR+I×R₁, the target voltagegenerator 26 generates the voltage VPERIR so that the current value ofthe current I approximates the target value I₁. When the difference hasa positive value (I<I₁), the voltage VPERIR is made higher. As a result,the voltage applied between the anode and cathode of the replicatransistors 22 and 23 becomes higher, and the current value of thecurrent I becomes greater. At the same time, the power-supply voltageVPERI generated by the buffer circuit 21 also becomes higher, andaccordingly, the ON current flowing in the CMOS 1 c (FIG. 1) in theperipheral circuit also increases. When the difference has a negativevalue (I>I₁), on the other hand, the voltage VPERIR is made lower. As aresult, the voltage applied between the anode and cathode of the replicatransistors 22 and 23 becomes lower, and the current value of thecurrent I becomes smaller. At the same time, the power-supply voltageVPERI generated by the buffer circuit 21 also becomes lower, andaccordingly, the ON current flowing in the CMOS 1 c (FIG. 1) in theperipheral circuit also decreases.

As a result of the above described operation of the voltage controller24, the ON current flowing in the CMOS 1 c in the peripheral circuit ismaintained at the constant value I₁, regardless of ambient temperature.Accordingly, a constant operation speed can be achieved, regardless ofambient temperature. Also, even if variations in film thickness and linewidth are caused among products, a constant operation speed can beachieved.

Since the replica transistors 22 and 23 that are replicas of thep-channel MOS transistor 1 p and the n-channel MOS transistor 1 n,respectively, are connected in parallel between the voltage applier 25and the ground, the mean value of the ON current of the transistor 1 pand the transistor 1 n becomes the above described constant value I.Accordingly, even if the p-channel MOS transistor and the n-channel MOStransistor vary with ambient temperature changes independently of eachother in the peripheral circuit formed with a large number of chainedCMOSs, a constant operation speed can be achieved in the entire chain.

Furthermore, with the two replica transistors, the variations among MOSsas products are averaged. Accordingly, the operation speed can be moreeffectively kept at a constant value.

The resistance value R₁ of the feedback resistor 25 r should preferablybe determined so that the voltage VR (=I₁×R₁) has a value between 0.2 Vand 0.5 V. This is because, if the voltage VR is too low, the error ofthe output of the target voltage generator 26 becomes larger, and, ifthe voltage VR is too high, the MOSs forming the voltage controller 24easily enter a desaturated region.

The internal structures of the operational amplifiers (the operationalamplifiers 25 c, 27 o-1 through 27 o-3, the comparators A22 and A23, andthe like) used in the semiconductor device 1 are now described indetail.

FIG. 5A is a circuit diagram of a constant current circuit for supplyinga constant voltage VGN to an operational amplifier. FIG. 5B is a circuitdiagram showing the internal structure of an operational amplifier.

The constant current circuit illustrated in FIG. 5A has a structure inwhich a resistor RS and an n-channel MOS transistor MS1 are connected inseries in this order between the wiring to which a power-supply voltageD₁ is supplied and the wiring to which a ground voltage E₁ is supplied.The transistor MS1 is diode-connected, and the constant voltage VGN isoutput from the connecting point between the resistor RS and thetransistor MS1. The specific voltage values of the power-supply voltageD₁ and the ground voltage E₁ may be the same as the externalpower-supply voltage VDD and the external ground voltage VSS,respectively.

An operational amplifier has a structure that is formed with adifferential amplifier circuit 100 and an output circuit 101cascade-connected to each other, as shown in FIG. 5B. More specifically,an input VIN− of the inverting input terminal and an input VIN+ of thenoninverting input terminal are first supplied to the differentialamplifier circuit 100, and the output of the differential amplifiercircuit 100 is supplied to the output circuit 101. The output of theoutput circuit 101 becomes the output VOUT of the output terminal.

The differential amplifier circuit 100 is formed with p-channel MOStransistors M1 and M2 current-mirror connected to each other, n-channelMOS transistors M3 and M4 connected in series to the transistors M1 andM2, respectively, and an n-channel MOS transistor M5 connected to thesources of the transistors M3 and M4. The ground voltage E₂ is suppliedto the drain of the transistor M5, and the voltage VGN is supplied tothe gate of the transistor M5. The power-supply voltage D₂ is suppliedto the drains of the transistors M1 and M2. The input VIN+ of thenoninverting input terminal is input to the gate of the transistor M3,and the input VIN− of the inverting input terminal is input to the gateof the transistor M4. The output of the differential amplifier circuit100 is output from the connecting point between the transistor M2 andthe transistor M4.

The output circuit 101 is formed with a p-channel MOS transistor M6having the output of the differential amplifier circuit 100 supplied toits gate, an n-channel MOS transistor M7 connected to the source of thetransistor M6, and a phase-compensating resistor RC and capacitor CCconnected in series between the gate and the drain of the transistor M6.The ground voltage E₂ is supplied to the drain of the transistor M7, andthe voltage VGN is supplied to the gate of the transistor M7. Thepower-supply voltage D₂ is supplied to the drain of the transistor M6.The output of the output circuit 101 is output from the source of thetransistor M7, and becomes the output VOUT of the operational amplifier.

In the operational amplifiers in the VPERI control circuit 2 shown inFIG. 4, the power-supply voltage D₂ is a power-supply voltage VPP (>VDD)that is obtained by boosting the external power-supply voltage VDD (=1.2V). This is because the output voltage (VPERIR+I×R₁) of the operationalamplifier 25 o and the output voltage (VPERIR+I₁×R₁) of the operationalamplifier 27 o-3 might become higher than the external power-supplyvoltage VDD. The specific value of the power-supply voltage VPP ispreferably 1.5 V or higher, where the voltage VPERIR is 1.0 V, thevoltage VR is 0.3 V, and the minimum source-drain voltage VDS requiredfor each MOS transistor to enter a saturation region is 0.2 V.Meanwhile, the ground voltage E₂ may be equal to the external groundvoltage VSS.

FIGS. 5A and 5B show an operational amplifier of an n-channel MOStransistor input type that has n-channel MOS transistors as thetransistors M3 and M4. However, the differential amplifier circuit 100may be an operational amplifier of a p-channel MOS transistor input typethat has p-channel MOS transistors as the transistors M3 and M4. It ispossible to determine which operational amplifier to use in accordancewith the size of the input VIN+. More specifically, where the input VIN+is larger than 0.5 V but is smaller than VPP-0.2 V, it is preferable touse an operational amplifier of an n-channel MOS transistor input type.Where the input VIN+ is equal to or smaller than 0.5 V, it is preferableto use an operational amplifier of a p-channel MOS transistor inputtype.

Next, two modifications of the VPERI control circuit 2 are described.

FIG. 6 is a circuit diagram of a VPERI control circuit 2 according to afirst modification. In the VPERI control circuit 2 according to thismodification, the power consumption is smaller than the powerconsumption in the VPERI control circuit 2 illustrated in FIG. 4. Morespecifically, the VPERI control circuit 2 is the circuit thatcompensates the ON current of the CMOSs in the peripheral circuit bykeeping the power-supply voltage VPERI at a constant value. Therefore,the VPERI control circuit 2 needs to operate in the strong inversionregion (FIG. 2) having high current density, and the current flowinginside is as large as several tens of microamperes to several hundredsof microamperes. Such a large current flowing inside leads to anincrease in the power consumption of the VPERI control circuit 2. It ispossible to reduce the current flowing inside the VPERI control circuit2 by actually lowering the W/L ratio of the replica transistors by meansof providing a plural of replica transistors connected in series, forexample. However, the current value of the current flowing in suchreplica transistors differs from the current value of the currentflowing in the transistors in the peripheral circuit, and the originalfunction to maintain the operational current in the peripheral circuitin a uniform state is adversely affected. The VPERI control circuit 2according to this modification was developed in view of thosecircumstances, and is capable of reducing the power consumption of theVPERI control circuit 2 while maintaining the current value of thecurrent flowing inside.

As shown in FIG. 6, the VPERI control circuit 2 according to thismodification differs from the VPERI control circuit 2 of FIG. 4 only inthat a switch controller 29, switch elements SW1 and SW2, and acapacitive element CH are added. In the following, the difference ismainly described.

As shown in FIG. 6, the switch element SW1 is inserted between the inputterminal i2 and the anode of the replica transistors 22 and 23. Theswitch element SW2 is inserted between the output terminal of and theinput terminal i4. The capacitive element CH is inserted between theground and the wiring connecting the switch element SW2 and the inputterminal i4.

The switch controller 29 (the first switch control circuit) periodicallyopens and closes the switch elements SW1 and SW2. More specifically, theswitch controller 29 closes (turns on) the switch elements SW1 and SW2,to charge the capacitive element CH with a voltage VPERIR+I×R whileallowing the current I to flow into the replica transistors 22 and 23.After a predetermined period of time has passed since the closing of theswitch elements SW1 and SW2, the switch controller 29 opens (turns off)the switch elements SW1 and SW2. In this situation, the voltageVPERIR+I×R is supplied from the capacitive element CH to the inputterminal i4 of the target voltage generator 26. Accordingly, currentdoes not flow into the replica transistors 22 and 23 while the switchelements SW1 and SW2 are open, but the power-supply voltage VPERI can beappropriately generated. In this manner, the power consumption of theVPERI control circuit 2 can be reduced, while the current value of thecurrent flowing inside the VPERI control circuit 2 is maintained.

The period of time during which the switch elements SW1 and SW2 areclosed, and the period of time during which the switch elements SW1 andSW2 are open are preferably 1 microsecond and 10 microseconds,respectively, for example. In such a case, the power consumption of theVPERI control circuit 2 is reduced to 1/10 of the power consumption of acase where the switch elements SW1 and SW2 are not provided.

To open the switch elements SW1 and SW2, the switch element SW2 ispreferably opened first, and the switch element SW1 is opened after ashort interval. To close the switch elements SW1 and SW2, the switchelement SW1 is preferably closed first, and the switch element SW2 isclosed after a short interval. This is to prevent inappropriate changesin the amount of charges accumulated in the capacitive element CH whenthe switch elements SW1 and SW2 are opened and closed. Here, “open andclose” or “opening and closing” are equivalent to “ON and OFF”, where“OFF” indicates electric nonconductivity, and “ON” indicates electricconductivity.

FIG. 7 is a schematic block diagram showing the functional blocks of aVPERI control circuit 2 according to a second modification. FIG. 8 is acircuit diagram of the VPERI control circuit 2 according to the secondmodification. As shown in FIG. 7, the VPERI control circuit 2 accordingto the second modification includes a buffer circuit 51 and a voltagecontroller 54, instead of the buffer circuit 21 and the voltagecontroller 24.

In the VPERI control circuit 2 illustrated in FIGS. 3 and 4, a boostedpower-supply voltage VPP needs to be supplied to the transistors in theoperational amplifiers, as described with reference to FIGS. 5A and 5B.In the VPERI control circuit 2 according to this modification, on theother hand, the power-supply voltage VPP is unnecessary. In thefollowing, the structure and operation of the VPERI control circuit 2are described in detail.

The buffer circuit 51 is the circuit that generates the power-supplyvoltage VPERI of the CMOS 1 c (FIG. 1), with the target voltage beingthe voltage VPERIR controlled by the voltage controller 54. Morespecifically, the buffer circuit 51 includes a p-channel MOS transistor51 p connected between the power-supply wiring 1 a and the power-supplywiring to which the external power-supply voltage VDD is supplied, and acomparator A52 as shown in FIG. 8. The power-supply voltage VPERI issupplied to the power-supply wiring 1 a.

The noninverting input terminal of the comparator A52 is connected tothe power-supply wiring 1 a, and receives the voltage VPERI generatedfrom the buffer circuit 51. The voltage VPERIR is supplied from thetarget voltage generator 56 to the inverting input terminal of thecomparator A52. Accordingly, the comparator A52 compares the voltageVPERI with the voltage VPERIR. If the voltage VPERI is lower than thevoltage VPERIR, the comparator A52 outputs a low-level signal. If thevoltage VPERI is higher than the voltage VPERIR, the comparator A52outputs a high-level signal. As a result, when the voltage VPERI becomeslower than the voltage VPERIR, the transistor 51 p is put into an ONstate, and the power-supply wiring 1 a is connected to the externalpower-supply voltage VDD. Accordingly, the potential of the power-supplywiring 1 a gradually becomes higher. On the other hand, when the voltageVPERI becomes higher than the voltage VPERIR, the transistor 51 p is putinto an OFF state, and the power-supply wiring 1 a is disconnected fromthe external power-supply voltage VDD. Accordingly, the potential of thepower-supply wiring 1 a gradually becomes lower. Through the aboveoperation, the potential of the power-supply wiring 1 a becomes equal tothe voltage VPERIR at last.

Instead of the buffer circuit 51, the buffer circuit 21 illustrated inFIG. 4 and others may be used. The buffer circuit 21 and the buffercircuit 51 each have advantages and disadvantages, and therefore, it ispreferable to select one of them as needed. Where an n-channel MOStransistor is used as in the buffer circuit 21, relatively high-speedtransient response characteristics are achieved, and only a smallstabilizing capacity is required. However, a boosted power-supplyvoltage VPP is required. Where a p-channel MOS transistor is used as inthe buffer circuit 51, on the other hand, relatively low-speed transientresponse characteristics are achieved, and a relatively largestabilizing capacity is required. However, the power-supply voltage VPPis unnecessary. It is preferable to determine which one of the buffercircuit and the buffer circuit 51 to use, with those advantages anddisadvantages being taken into consideration.

Like the voltage controller 24 illustrated in FIG. 3 and others, thevoltage controller 54 (the voltage control circuit) controls the voltagebetween the anode and cathode of the replica transistors 22 and 23, sothat the forward current I (the ON current) flowing in the replicatransistors 22 and 23 becomes equal to the target value I₁. In thefollowing, the structure and operation of the voltage controller 54 aredescribed in detail.

First, the structure of the voltage controller 54 is described.

As shown in FIG. 7, a voltage applier 55, a target voltage generator 56,and a constant current generator 57 are provided inside the voltagecontroller 54. As shown in FIG. 8, the voltage applier 55 (the firstvoltage applying circuit) includes an operational amplifier A51 and acurrent control circuit 55 c including p-channel MOS transistors 55 p-1and 55 p-2. The transistors 55 p-1 and 55 p-2 have the same size (thesame W/L ratio) as each other.

The noninverting input terminal and the inverting input terminal of theoperational amplifier A51 form the input terminals i5 and i6 of thevoltage applier 55, respectively. The input terminal i5 is connected tothe anode of the replica transistors 22 and 23. The sources of thetransistors 55 p-1 and 55 p-2 form the output terminals o3 and o4 of thevoltage applier 55, respectively. The gates of the transistors 55 p-1and 55 p-2 are both connected to the output terminal of the operationalamplifier A51, and the external power-supply voltage VDD is supplied toeach drain. The output terminal o3 is connected to the input terminali5.

The target voltage generator 56 (the target voltage generating circuit)includes a current control circuit 56 c including n-channel MOStransistors 56 n-1 and 56 n-2, as shown in FIG. 8. The transistors 56n-1 and 56 n-2 have the same size (the same W/L ratio) as each other.

The sources of the transistors 56 n-1 and 56 n-2 form the inputterminals i7 and i8 of the target voltage generator 56, respectively,and the drains are both grounded. The gate of the transistor 56 n-1 andthe gate of the transistor 56 n-2 are connected to each other, and thetransistor 56-1 is diode-connected. The input terminal i7 is connectedto the output terminal o4 of the voltage applier 55, and the inputterminal i8 is connected to the input terminal i6 of the voltage applier55.

The constant current generator 57 (the constant current generatingcircuit) includes an operational amplifier A53, a current controlcircuit 57 c including p-channel MOS transistors 57 p-1 and 57 p-2, anda resistor 57 r of a resistance value RF, as shown in FIG. 8. Thetransistors 57 p-1 and 57 p-2 have the same size (the same W/L ratio) aseach other.

The gates of the transistors 57 p-1 and 57 p-2 are both connected to theoutput terminal of the operational amplifier A53, and the externalpower-supply voltage VDD is supplied to each drain. The source of thetransistor 57 p-1 is connected to the noninverting input terminal of theoperational amplifier A53, and the source of the transistor 57 p-2 isconnected to the input terminal i8 of the target voltage generator 56.The resistor 57 r is connected between the ground and the wiringconnecting the source of the transistor 57 p-1 and the noninvertinginput terminal of the operational amplifier A53. The voltage VRgenerated from a bandgap circuit (not shown) is supplied to theinverting input terminal of the operational amplifier A53. Generatedfrom a bandgap circuit, the voltage VR has very low temperaturedependence.

In addition to the above components, the voltage controller 54 includesa phase compensating circuit 58 that is inserted between the ground andthe wiring connecting the input terminal i8 and the buffer circuit 51,as shown in FIG. 8. In this embodiment, a capacitive element is used asa specific example of the phase compensating circuit 58.

The specific structures of the operational amplifiers A51 through A53are the same as the structure of the operational amplifier illustratedin FIGS. 5A and 5B. However, the power-supply voltage D₂ is not thepower-supply voltage VPP (>VDD) but is the external power-supply voltageVDD.

Next, the operation of the voltage controller 54 is described.

The voltage applier 55 applies the voltage VPERIR between the anode andcathode of the replica transistors 22 and 23. More specifically, thevoltage of the input terminal i5 becomes equal to the voltage of theinput terminal i6, because of virtual short-circuiting of theoperational amplifier A51. Since the voltage VPERIR generated by thetarget voltage generator 26 is input to the input terminal i6, thevoltage VPERIR is applied to the anode of the replica transistors 22 and23. As the cathode of the replica transistors 22 and 23 is grounded, theanode-cathode voltage of the replica transistors 22 and 23 becomes equalto the voltage VPERIR.

By virtue of the voltage VPERIR applied between the anode and cathode,the forward current I (the ON current) in accordance with the voltageVPERIR flows in the replica transistors 22 and 23, as described withreference to FIG. 4.

The current I flows from the output terminal o3 of the voltage applier55 toward the replica transistors 22 and 23. Since the transistor 55 p-1and the transistor 55 p-2 form a current mirror structure in the currentcontrol circuit 55 c, the current I of the same current value flows intothe output terminal o4 (the source of the transistor 55 p-2) when thecurrent I flows into the output terminal o3 (the source of thetransistor 55 p-1). Accordingly, the current I is input to the inputterminal i7 of the target voltage generator 26.

The constant current generator 57 is the circuit that generates aconstant current I₁ having the same current value as the target valueI₁, and outputs the constant current I₁ to the input terminal i8 of thetarget voltage generator 56. The specific voltage value of the abovedescribed voltage VR is set at I₁×RF, and the current VR/RF=I₁ flowsfrom the source of the transistor 57 p-1 to the resistor 57 r. Since thetransistor 57 p-1 and the transistor 57 p-2 form a current mirrorstructure in the current control circuit 57 c, the current I₁ of thesame current value also flows into the source of the transistor 57 p-2when the current I₁ flows into the source of the transistor 57 p-1.Accordingly, the current I₁ is input to the input terminal i8 of thetarget voltage generator 26.

Based on the difference between the current I flowing in the replicatransistors 22 and 23 and the target value I₁, the target voltagegenerator 56 generates the voltage VPERIR that is the target voltage ofthe voltage control of the buffer circuit 51. In other words, thecurrent control circuit 56 c in the target voltage generator 56 controlsthe voltage of the input terminal i8 so that the current I flowing inthe input terminal i7 becomes equal to the current I₁ flowing in theinput terminal i8.

More specifically, in the current control circuit 56 c, the transistor56-1 and the transistor 56 n-2 form a current mirror structure, and thetransistor 56 n-1 is diode-connected. Accordingly, the voltage (thevoltage VPERIR) of the input terminal i8 becomes higher when the currentI becomes smaller than the current and becomes lower when the current Ibecomes larger than the current I₁. The input terminal i8 is connectedto the input terminal i6 of the voltage applier 55, and the inputterminal i6 is the inverting input terminal of the operational amplifierA51. Therefore, when the voltage of the input terminal i8 becomeshigher, the drain current of the transistors 55 p-1 and 55 p-2 in thecurrent control circuit 55 c increases. As a result, the current Iflowing in the replica transistors 22 and 23 also becomes larger.Meanwhile, when the voltage of the input terminal i8 becomes higher, thevoltage VPERIR to be input to the noninverting input terminal of thebuffer circuit 51 becomes higher. As a result, the voltage VPERI to besupplied to the CMOS 1 c in the peripheral circuit becomes higher.

When the voltage of the input terminal i8 becomes lower, on the otherhand, the drain current of the transistors 55 p-1 and 55 p-2 in thecurrent control circuit 55 c decreases. Accordingly, the current Iflowing in the replica transistors 22 and 23 also becomes smaller.Meanwhile, when the voltage of the input terminal i8 becomes lower, thevoltage VPERIR to be input to the inverting input terminal of the buffercircuit 51 becomes lower. As a result, the voltage VPERI to be suppliedto the CMOS 1 c in the peripheral circuit becomes lower.

As a result of the above described operation of the voltage controller54, the ON current flowing in the CMOS 1 c in the peripheral circuit ismaintained at the constant value I₁, regardless of ambient temperature.Accordingly, a constant operation speed can be achieved, regardless ofambient temperature. Also, even if variations in film thickness and linewidth are caused among products, a constant operation speed can beachieved.

Furthermore, there are no portions having a higher voltage than theexternal power-supply voltage VDD in the VPERI control circuit 2according to this modification. Accordingly, the power-supply voltageVPP (>VDD) becomes unnecessary.

FIG. 8 also shows a switch controller 59 and switch elements SW3 throughSW5. Those are not necessary components. With those components, however,the power consumption of the VPERI control circuit 2 can be reducedwhile the current value of the current flowing inside the VPERI controlcircuit 2 is maintained, as described in the first modification. Thisaspect is described below in detail.

As shown in FIG. 8, the switch element SW3 is inserted between the inputterminal i5 and the anode of the replica transistors 22 and 23. Theswitch element SW4 is inserted between the input terminal i8 and thebuffer circuit 51. The switch element SW5 is provided in the inputterminal i8.

The switch controller 59 (the second switch control circuit)periodically opens and closes the switch elements SW3 through SW5. Morespecifically, the switch controller 59 first closes (turns on) theswitch elements SW3 through SW5, to charge the capacitive element in thephase compensating circuit 58 with the voltage VPERIR while allowing thecurrent I to flow into the replica transistors 22 and 23. After apredetermined period of time has passed since the closing of the switchelements SW3 through SW5, the switch controller 59 opens (turns off) theswitch elements SW3 through SW5. In this situation, the voltage VPERIRis supplied from the capacitive element in the phase compensatingcircuit 58 to the buffer circuit 51. Accordingly, current does not flowinto the replica transistors 22 and 23 while the switch elements SW3through SW5 are open, but the power-supply voltage VPERI can beappropriately generated. In this manner, the power consumption of theVPERI control circuit 2 can be reduced, while the current value of thecurrent flowing inside the VPERI control circuit 2 is maintained.

The period of time during which the switch elements SW3 through SW5 areclosed, and the period of time during which the switch elements SW3through SW5 are open are preferably 1 microsecond and 10 microseconds,respectively, for example. In such a case, the power consumption of theVPERI control circuit 2 is reduced to 1/10 of the power consumption of acase where the switch elements SW3 through SW5 are not provided.

To open the switch elements SW3 through SW5, the switch element SW4 ispreferably opened first, and the switch elements SW3 and SW5 are openedafter a short interval. To close the switch elements SW3 through SW5,the switch elements SW3 and SW5 are preferably closed first, and theswitch element SW4 is closed after a short interval. This is to preventinappropriate changes in the amount of charges accumulated in thecapacitive element in the phase compensating circuit 58 when the switchelements SW3 through SW5 are opened and closed.

FIG. 9 is a schematic block diagram showing the functional blocks of theVPW control circuit 3. FIG. 10 is a circuit diagram of the VPW controlcircuit 3. As shown in FIG. 9, the VPW control circuit 3 includes asubstrate voltage generating circuit 31, a replica transistor 32, avoltage applier 33, and an input voltage generator 34. In the following,the structure of each component will be first described, and theoperation of the VPW control circuit 3 will be then described.

The substrate voltage generating circuit 31 (the first substrate voltagegenerating circuit) is the circuit that generates the substrate voltageVPW of the n-channel MOS transistor 1 n shown in FIG. 1. Morespecifically, the substrate voltage generating circuit 31 includes anoperational amplifier A32 having input terminals i11 and i12 and anoutput terminal o6, as shown in FIG. 10. The input terminal i11 is anoninverting input terminal, and the input terminal i12 is an invertinginput terminal. An output voltage of the input voltage generator 34 issupplied to the input terminal i11, and an output voltage of the voltageapplier 33 is supplied to the input terminal i12.

The specific structure of the operational amplifier A32 is the same asthe structure of the operational amplifier illustrated in FIGS. 5A and5B. Here, the power-supply voltage D₂ is the external power-supplyvoltage VDD, and the ground voltage E₂ is a ground voltage VBBSVobtained by stepping down the external ground voltage VSS. It ispreferable that the specific voltage value of the ground voltage VBBSVis between −2.5 V and −3.0 V. A power-supply voltage for an anti-fusecircuit provided in a DRAM may be used as the ground voltage E₂.

The replica transistor 32 (the third replica transistor) is a replica ofthe n-channel MOS transistor 1 n shown in FIG. 1. As shown in FIG. 9,the replica transistor 32 is diode-connected, and is forward-connectedbetween the voltage applier 33 and the ground. In other words, the anodeof the replica transistor 32 is connected to the voltage applier 33, andthe cathode is grounded. The substrate voltage VPW generated by thesubstrate voltage generating circuit 31 is supplied as the substratevoltage of the replica transistor 32.

As shown in FIG. 10, the voltage applier 33 (the second voltage applyingcircuit) includes a noninverting amplifier A31 that is formed with anoperational amplifier 33 o having input terminals i9 and i10 and anoutput terminal o5, and a feedback resistor 33 r of a resistance valueR₂. The input terminal i9 is a noninverting input terminal, and theinput terminal i10 is an inverting input terminal. The feedback resistor33 r is inserted between the output terminal o5 and the input terminali10. The input terminal i10 is connected to the anode of the replicatransistors 22 and 23. Meanwhile, a predetermined voltage VF1 issupplied to the input terminal i9.

As shown in FIG. 10, the input voltage generator 34 (the second inputvoltage generating circuit) includes: a voltage follower A33 formed withan operational amplifier 34 o-1; a noninverting amplifier A34 formedwith an operational amplifier 34 o-2, an input resistor 34 r-1, and afeedback resistor 34 r-2; and a noninverting amplifier A35 formed withan operational amplifier 34 o-3, an input resistor 34 r-3, and afeedback resistor 34 r-4. The specific internal structure of the inputvoltage generator 34 is the same as the above described input voltagegenerator 27. However, the output of the noninverting amplifier A35 thatis the output of the input voltage generator 34 is supplied to the inputterminal i11 of the substrate voltage generating circuit 31. A voltageVF1/2 that is half the size of the predetermined voltage VF1 is suppliedto the noninverting input terminal of the operational amplifier 34 o-2,and the predetermined voltage VF1 is supplied to the noninverting inputterminal of the operational amplifier 34 o-3.

The specific examples of the operational amplifiers 33 o and 34 o-1through 34 o-3 are the same as the structure of the operationalamplifier illustrated in FIGS. 5A and 5B. The power-supply voltage D₂and the ground voltage E₂ are the external power-supply voltage VDD andthe external ground voltage VSS, respectively.

Next, the operation of the VPW control circuit 3 is described.

First, the voltage applier 33 applies the voltage VF1 between the anodeand the cathode of the replica transistor 32. As a result, the voltageof the input terminal i10 becomes equal to the voltage of the inputterminal i9, due to virtual short-circuiting of the operationalamplifier 33 o. Since the predetermined voltage VF1 is input to theinput terminal i9, the voltage of the input terminal i10 becomes equalto the predetermined voltage VF1. Accordingly, the voltage VF1 isapplied to the anode of the replica transistor 32. Since the cathode ofthe replica transistor 32 is grounded, the anode-cathode voltage of thereplica transistor 32 becomes equal to the voltage VF1.

The voltage VF1 is set at a voltage corresponding to the weak inversionregion of MOS transistors shown in FIG. 2. Therefore, the replicatransistor 32 is in an OFF state while the voltage VF1 is being appliedbetween the anode and the cathode. Even when the replica transistor 32is in an OFF state, the forward current I (the OFF current)corresponding to the voltage VF1 flows into the replica transistor 32,as shown in FIG. 2. With the current I flowing into the replicatransistor 32, a voltage having a voltage value VF1+I×R₂ appears in theoutput terminal o5 of the voltage applier 33. This voltage VF1+I×R₂ isinput to the input terminal i12 of the substrate voltage generatingcircuit 31.

The input voltage generator 34 is the circuit that generates the inputvoltage of the input terminal i11 of the substrate voltage generatingcircuit 31. This input voltage is the output voltage of the outputterminal o5 determined in accordance with the above mentioned targetvalue I₂ (the target value of the current value of the OFF currentflowing in the replica transistor 32). In other words, the voltage thatappears in the output terminal o5 when the current value of the forwardcurrent in the replica transistor 32 becomes equal to the target valueI₂ is the above described input voltage. Accordingly, the input voltageis VF1+I₂×R₂.

The specific voltage value of the above described voltage VR is set atI₂×R₂, and the input voltage generator 34 generates the above inputvoltage VF1+I₂×R₂ from the voltage VR. The specific operations of thecomponents for generating the input voltage in the input voltagegenerator 34 are the same as those in the input voltage generator 27,and therefore, explanation of them is not repeated here.

Based on the difference between the target value I₂ and the currentvalue of the current I flowing in the replica transistor 32, thesubstrate voltage generating circuit 31 generates the voltage VPW sothat the current value of the current I becomes equal to the targetvalue I₂. In other words, the substrate voltage generating circuit 31generates the substrate voltage VPW, based on the voltage VF1+I₂×R₂ thatis input from the input voltage generator 34 to the input terminal i11and the output voltage (the voltage that is input to the input terminali12) VF1+I×R₂ of the voltage applier 33.

More specifically, in accordance with the difference I₂×R₂−I×R₂ betweenthe voltage VF1+I₂×R₂ and the voltage VF1+I×R₂, the substrate voltagegenerating circuit 31 generates the substrate voltage VPW so that thecurrent value of the current I approximates the target value I₂. Whenthe difference has a positive value (I<I₂), the external power-supplyvoltage VDD is output to the output terminal o6, to increase thesubstrate voltage VPW. As a result, the threshold voltage of the replicatransistor 32 becomes lower, and the current value of the current Ibecomes greater. At the same time, the OFF current of the n-channel MOStransistor 1 n (FIG. 1) in the peripheral circuit also becomes greater.When the difference has a negative value (I>I₂), on the other hand, theground voltage VBBSV (<VSS) is output to the output terminal o6, tolower the substrate voltage VPW. As a result, the threshold voltage ofthe replica transistor 32 becomes higher, and the current value of thecurrent I becomes smaller. At the same time, the OFF current of then-channel MOS transistor 1 n (FIG. 1) in the peripheral circuit becomessmaller.

As a result of the above described operation of the VPW control circuit3, the OFF current flowing in the n-channel MOS transistor 1 n in theperipheral circuit is maintained at the constant value I₂, regardless ofambient temperature.

FIG. 11 is a graph showing an example of a result of a control operationperformed on the substrate voltage VPW. As shown in FIG. 2, the currentvalue of the OFF current of a MOS transistor becomes greater, as thetemperature becomes higher. In view of this, the VPW control circuit 3reduces the voltage value of the substrate voltage VPW as thetemperature becomes higher, as shown in FIG. 11, and reduces the currentvalue of the OFF current of the n-channel MOS transistor.

It is preferable to put an upper limit and a lower limit on thesubstrate voltage VPW, as shown in FIG. 11. In FIG. 11, the upper limitis 0 V, and the lower limit is VBBSV+a (0<a<|VBBSV|). With thisarrangement, the substrate voltage VPW can be maintained within anappropriate range. The limitation on the voltage value of the substratevoltage VPW can be realized by providing a limiter circuit.

FIG. 12 is a schematic block diagram showing the functional blocks ofthe VNW control circuit 4. FIG. 13 is a circuit diagram of the VNWcontrol circuit 4. As shown in FIG. 12, the VNW control circuit 4includes a substrate voltage generating circuit 41, a replica transistor42, a voltage applier 43, and an input voltage generator 44. In thefollowing, the structure of each component will be first described, andthe operation of the VNW control circuit 4 will be then described.

The substrate voltage generating circuit 41 (the second substratevoltage generating circuit) is the circuit that generates the substratevoltage VNW of the p-channel MOS transistor 1 p shown in FIG. 1. Morespecifically, the substrate voltage generating circuit 41 includes anoperational amplifier A42 having input terminals i15 and i16 and anoutput terminal o8, as shown in FIG. 13. The input terminal i15 is anoninverting input terminal, and the input terminal i16 is an invertinginput terminal. An output voltage of the voltage applier 43 is suppliedto the input terminal i15, and an output voltage of the input voltagegenerator 44 is supplied to the input terminal i16. This relationship isthe opposite of the relationship in the substrate voltage generatingcircuit 31 in the VPW control circuit 3.

The specific structure of the operational amplifier A42 is the same asthe structure of the operational amplifier illustrated in FIGS. 5A and5B. Here, the power-supply voltage D₂ is the power-supply voltage VPP(>VDD), and the ground voltage E₂ is the external ground voltage VSS.

The replica transistor 42 (the fourth replica transistor) is a replicaof the p-channel MOS transistor 1 p shown in FIG. 1. As shown in FIG.12, the replica transistor 42 is diode-connected, and isforward-connected between the voltage applier 43 and the ground. Inother words, the anode of the replica transistor 42 is connected to thevoltage applier 43, and the cathode is grounded. The substrate voltageVNW generated by the substrate voltage generating circuit 41 is suppliedas the substrate voltage of the replica transistor 42.

As shown in FIG. 13, the voltage applier 43 (the third voltage applyingcircuit) includes a noninverting amplifier A41 that is formed with anoperational amplifier 43 o having input terminals i13 and i14 and anoutput terminal o7, and a feedback resistor 43 r of a resistance valueR₃. The input terminal i13 is a noninverting input terminal, and theinput terminal i14 is an inverting input terminal. The feedback resistor43 r is inserted between the output terminal o7 and the input terminali14. The input terminal i14 is connected to the anode of the replicatransistors 22 and 23. Meanwhile, a predetermined voltage VF2 issupplied to the input terminal i3.

As shown in FIG. 13, the input voltage generator 44 (the third inputvoltage generating circuit) includes: a voltage follower A43 formed withan operational amplifier 440-1; a noninverting amplifier A44 formed withan operational amplifier 44 o-2, an input resistor 44 r-1, and afeedback resistor 44 r-2; and a noninverting amplifier A45 formed withan operational amplifier 44 o-3, an input resistor 44 r-3, and afeedback resistor 44 r-4. The specific internal structure of the inputvoltage generator 44 is the same as the above described input voltagegenerator 34. However, the output of the noninverting amplifier A45 thatis the output of the input voltage generator 44 is supplied to the inputterminal i16 of the substrate voltage generating circuit 41.

The specific examples of the operational amplifiers 43 o and 44 o-1through 44 o-3 are the same as the structure of the operationalamplifier illustrated in FIGS. 5A and 5B. The power-supply voltage D₂and the ground voltage E₂ are the external power-supply voltage VDD andthe external ground voltage VSS, respectively.

Next, the operation of the VNW control circuit 4 is described.

First, the voltage applier 43 applies the voltage VF2 between the anodeand the cathode of the replica transistor 42. More specifically, likethe voltage applier 33, the voltage applier 43 applies the voltage VF2that is input to the input terminal i13 to the anode of the replicatransistor 42, due to virtual short-circuiting of the operationalamplifier 43 o.

The voltage VF2 is set at a voltage corresponding to the weak inversionregion of MOS transistors shown in FIG. 2. Therefore, the replicatransistor 42 is in an OFF state while the voltage VF2 is being appliedbetween the anode and the cathode. Even when the replica transistor 42is in an OFF state, the forward current I (the OFF current)corresponding to the voltage VF2 flows into the replica transistor 42,as shown in FIG. 2. With the current I flowing into the replicatransistor 42, a voltage having a voltage value VF2+I×R₃ appears in theoutput terminal o7 of the voltage applier 43. This voltage VF2+I×R₃ isinput to the input terminal i15 of the substrate voltage generatingcircuit 41.

The input voltage generator 44 is the circuit that generates the inputvoltage of the input terminal i16 of the substrate voltage generatingcircuit 41. This input voltage is the output voltage of the outputterminal o7 determined in accordance with the above mentioned targetvalue I₃ (the target value of the current value of the OFF currentflowing in the replica transistor 42). In other words, the voltage thatappears in the output terminal o7 when the current value of the forwardcurrent in the replica transistor 42 becomes equal to the target valueI₃ is the above described input voltage. Accordingly, the input voltageis VF2+I₃×R₃.

The specific voltage value of the above described voltage VR is set atI₃×R₃, and the input voltage generator 44 generates the above inputvoltage VF2+I₃×R₃ from the voltage VR. The specific operations of thecomponents for generating the input voltage in the input voltagegenerator 44 are the same as those in the input voltage generator 27,and therefore, explanation of them is not repeated here.

Based on the difference between the target value I₃ and the currentvalue of the current I flowing in the replica transistor 42, thesubstrate voltage generating circuit 41 generates the substrate voltageVNW so that the current value of the current I becomes equal to thetarget value I₃. In other words, the substrate voltage generatingcircuit 41 generates the substrate voltage VNW, based on the voltageVF2+I₃×R₃ that is input from the input voltage generator 44 to the inputterminal i16 and the output voltage (the voltage that is input to theinput terminal i15) VF2+I×R₃ of the voltage applier 43.

More specifically, in accordance with the difference I×R₃−I₃×R₃ betweenthe voltage VF2+I×R₃ and the voltage VF2+I₃×R₃, the substrate voltagegenerating circuit 41 generates the substrate voltage VNW so that thecurrent value of the current I approximates the target value I₃. Whenthe difference has a positive value (I>I₃), the power-supply voltage VPPis output to the output terminal o8, to increase the substrate voltageVNW. When the difference has a negative value (I<I₃), on the other hand,the power-supply voltage VSS is output to the output terminal o8, tolower the substrate voltage VNW.

The above described operation of the substrate voltage generatingcircuit 41 is the opposite of the operation of the substrate voltagegenerating circuit in the VPW control circuit 3. Such an oppositeoperation is realized by supplying the output voltage of the voltageapplier 43 to the input terminal i15 as a noninverting input terminal,and supplying the output voltage of the input voltage generator 44 tothe input terminal i16 as an inverting input terminal.

By virtue of the above described operation of the substrate voltagegenerating circuit 41, the threshold voltage of the replica transistor42 becomes higher, and the current value of the current I becomessmaller, when the current I is larger than the target value I₃. At thesame time, the OFF current of the p-channel MOS transistor 1 p (FIG. 1)in the peripheral circuit becomes smaller. When the current I is smallerthan the target value I₃, on the other hand, the threshold voltage ofthe replica transistor 42 becomes lower, and the current value of thecurrent I becomes larger. At the same time, the OFF current of thep-channel MOS transistor 1 p (FIG. 1) in the peripheral circuit becomeslarger. Accordingly, the OFF current flowing in the p-channel MOStransistor 1 p in the peripheral circuit is maintained at the constantvalue I₃, regardless of ambient temperature.

FIG. 14 is a graph showing an example of a result of a control operationperformed on the substrate voltage VNW. As shown in FIG. 2, the currentvalue of the OFF current of a MOS transistor becomes greater, as thetemperature becomes higher. In a p-channel MOS transistor, however, thethreshold voltage becomes larger, and the OFF current becomes smaller,as the voltage value of the substrate voltage VNW becomes larger. Thisis the opposite of the situation observed in n-channel MOS transistors.In view of this, the VNW control circuit 4 increases the voltage valueof the substrate voltage VNW and reduces the current value of the OFFcurrent of the p-channel MOS transistor, as the temperature becomeshigher, as shown in FIG. 14.

It is also preferable to put an upper limit and a lower limit on thesubstrate voltage VNW, as shown in FIG. 14. In FIG. 14, the upper limitis VPP-a (0<a<VPP), and the lower limit is VDD. With this arrangement,the substrate voltage VNW can be maintained within an appropriate range.The limitation on the voltage value of the substrate voltage VNW can berealized by providing a limiter circuit.

For example, the VPW control circuit 3 illustrated in FIGS. 9 and 10directly controls the substrate voltage VPW with the output of thesubstrate voltage generating circuit 31. However, a negative voltagepumping circuit may be provided at the output end of the substratevoltage generating circuit 31, and the switching on and off of thenegative voltage pumping circuit may be controlled with the output ofthe substrate voltage generating circuit 31. The substrate voltage VPWmay be controlled in such a manner.

Likewise, the VNW control circuit 4 illustrated in FIGS. 12 and 13directly controls the substrate voltage VNW with the output of thesubstrate voltage generating circuit 41. However, a positive voltagepumping circuit may be provided at the output end of the substratevoltage generating circuit 41, and the switching on and off of thepositive voltage pumping circuit may be controlled with the output ofthe substrate voltage generating circuit 41. The substrate voltage VNWmay be controlled in such a manner.

The voltage VF1, the target value I₂ of the OFF current, and thefeedback resistor R₂ used in the VPW control circuit 3 may be the samevalue as the voltage VF2, the target value I₃ of the OFF current, andthe feedback resistor R₃ used in the VNW control circuit 4. In thiscase, the input voltage generator 34 in the VPW control circuit 3 andthe input voltage generator 44 in the VNW control circuit 4 can becombined into one. Accordingly, the installation area and productioncosts of the circuits can be reduced.

The present invention may also be applied to a wide variety of fieldeffect transistors with threshold voltages, such as MOS transistors andMIS (Metal-Insulator Semiconductors) to be formed on silicon substrates,and TFT (Thin Film Transistors) that is a kind of MOS transistor.

The present invention may also be applied to semiconductor deviceshaving memory functions and logic functions, and semiconductor devicessuch as SOC (System-on-Chip), MCP (Multi-Chip Packages), and POP(Package-on-Packages) having the memory functions and logic functionsmounted thereon.

What is claimed is:
 1. A semiconductor device comprising: a buffercircuit that generates a power-supply voltage of a complementary fieldeffect transistor circuit including a first field effect transistor of afirst conductivity type and a second field effect transistor of a secondconductivity type; a first replica transistor that is a replica of thefirst field effect transistor, the first replica transistor beingdiode-connected; a second replica transistor that is a replica of thesecond field effect transistor, the second replica transistor beingdiode-connected and being connected in parallel to the first replicatransistor to share an anode and a cathode; and a voltage controlcircuit that controls a voltage between the anode and cathode shared bythe first and second replica transistors in such a manner that a totalcurrent value of currents flowing in the first and second replicatransistors becomes equal to a predetermined first target value, whereinthe buffer circuit generates the power-supply voltage, with a targetvoltage being the voltage between the anode and cathode controlled bythe voltage control circuit.
 2. The semiconductor device as claimed inclaim 1, wherein the value of each of the currents flowing in the firstand second replica transistors is a current value of a strong inversionregion in which temperature characteristics are negative temperaturecharacteristics that become smaller as temperature becomes higher, and achannel region of the first and second replica transistors has a squaredchange with respect to a change in the voltage value between the anodeand cathode shared by the first and second replica transistors.
 3. Thesemiconductor device as claimed in claim 1, wherein the voltage controlcircuit comprises: a first voltage applying circuit that applies thetarget voltage between the anode and cathode shared by the first andsecond replica transistors; and a target voltage generating circuit thatgenerates the target voltage, based on a difference between the firsttarget value and the total current value of the currents flowing in thefirst and second replica transistors.
 4. The semiconductor device asclaimed in claim 3, wherein the first voltage applying circuit comprisesa noninverting amplifier that includes first and second input terminalsand a first output terminal, the target voltage generating circuitcomprises a comparator that includes third and fourth input terminalsand a second output terminal, the semiconductor device further comprisesa first input voltage generating circuit that generates an input voltageof the third input terminal, the first input terminal and the secondoutput terminal are connected to each other, and the first outputterminal and the fourth input terminal are connected to each other, thefirst and second replica transistors are inserted in a forward directionand in parallel between the second input terminal and a ground, thefirst input voltage generating circuit generates a target value forcontrolling an output voltage of the first output terminal determined bythe first target value, the first input voltage generating circuitoutputting the target value to the third input terminal, and thecomparator in the target voltage generating circuit generates the targetvoltage between the anode and cathode shared by the first and secondreplica transistors, based on the voltage that is input to the thirdinput terminal and the output voltage of the first output terminal thatis input to the fourth input terminal, the comparator outputting thetarget voltage from the second output terminal to the buffer circuit. 5.The semiconductor device as claimed in claim 4, wherein the noninvertingamplifier comprises a feedback resistor that is inserted between thefirst output terminal and the second input terminal, and the targetvalue for controlling the output voltage of the first output terminal isdetermined based on a resistance value of the feedback resistor.
 6. Thesemiconductor device as claimed in claim 5, wherein the first inputvoltage generating circuit comprises a level-shift circuit that receivesa voltage having a voltage value formed by multiplying the first targetvalue by the resistance value of the feedback resistor, and shifts alevel of the voltage having the multiplied voltage value received, basedon the target voltage generated by the target voltage generatingcircuit.
 7. The semiconductor device as claimed in claim 6, wherein thevoltage that is input to the first input voltage generating circuit isgenerated by a bandgap circuit that generates a substance-specificconstant potential.
 8. The semiconductor device as claimed in claim 4,wherein the voltage control circuit further comprises a phasecompensating circuit that is inserted between the ground and a wiringconnecting the first input terminal and the second output terminal. 9.The semiconductor device as claimed in claim 4, wherein the voltagecontrol circuit further comprises: a first switch element that isinserted between the second input terminal and the anode shared by thefirst and second replica transistors; a second switch element that isinserted between the first output terminal and the fourth inputterminal; a capacitive element that is inserted between the ground and awiring connecting the second switch element and the fourth inputterminal; and a first switch control circuit that periodically controlselectric nonconductivity and conductivity of each of the first andsecond switch elements.
 10. The semiconductor device as claimed in claim9, wherein the first switch control circuit makes the second switchelement electrically nonconductive and makes the first switch elementelectrically nonconductive in this order to make the first and secondswitch elements electrically nonconductive, and the first switch controlcircuit makes the first switch element electrically conductive and makesthe second switch element electrically conductive in this order to makethe first and second switch elements electrically conductive.
 11. Thesemiconductor device as claimed in claim 3, wherein the first voltageapplying circuit comprises an operational amplifier that includes fifthand sixth input terminals, and a first current control circuit thatincludes third and fourth output terminals, the target voltagegenerating circuit comprises a second current control circuit thatincludes seventh and eighth input terminals, the semiconductor devicefurther comprises a constant current generating circuit that generates aconstant current of the first target value and outputs the constantcurrent to the eighth input terminal, the sixth input terminal and theeighth input terminal are connected to each other, the fifth inputterminal and the third output terminal are connected to each other, andthe fourth output terminal and the seventh input terminal are connectedto each other, the first and second replica transistors are inserted ina forward direction and in parallel between the fifth input terminal anda ground, the first current control circuit outputs a current having thesame current value as a current flowing in the third output terminal, tothe fourth output terminal, the second current control circuit controlsa voltage of the eighth input terminal, to make a current flowing in theseventh input terminal equal to the current value of the constantcurrent, and the buffer circuit obtains the voltage of the eighth inputterminal as the target voltage.
 12. The semiconductor device as claimedin claim 11, wherein the second current control circuit is a currentmirror circuit that has the seventh and eighth input terminals as aninput and an output.
 13. The semiconductor device as claimed in claim11, wherein the constant current generating circuit generates theconstant current of the first target value, using a constant voltagegenerated by a bandgap circuit that generates a substance-specificconstant potential.
 14. The semiconductor device as claimed in claim 11,wherein the voltage control circuit further comprises a phasecompensating circuit that is inserted between the ground and a wiringconnecting the eighth input terminal and the buffer circuit.
 15. Thesemiconductor device as claimed in claim 14, wherein the voltage controlcircuit further comprises: a third switch element that is insertedbetween the anode of the first and second replica transistors, and thefifth input terminal and the third output terminal; a fourth switchelement that is inserted between the eighth input terminal and thebuffer circuit; a fifth switch element that is provided in the eighthinput terminal; and a second switch control circuit that periodicallycontrols electric nonconductivity and conductivity of each of the thirdthrough fifth switch elements.
 16. The semiconductor device as claimedin claim 15, wherein the second switch control circuit makes the fourthswitch element electrically nonconductive and makes the third and fifthswitch elements electrically nonconductive in this order to make thethird through fifth switch elements electrically nonconductive, and thesecond switch control circuit makes the third and fifth switch elementselectrically conductive and makes the fourth switch element electricallyconductive in this order to make the third through fifth switch elementselectrically conductive.
 17. The semiconductor device as claimed inclaim 1, further comprising: a first substrate voltage generatingcircuit that generates a substrate voltage of one of the first andsecond field effect transistors; a third replica transistor that is areplica of the one of the first and second field effect transistors, thethird replica transistor being diode-connected; and a second voltageapplying circuit that applies a voltage of a predetermined first voltagevalue between an anode and cathode of the third replica transistor,wherein a substrate voltage of the third replica transistor is thesubstrate voltage generated by the first substrate voltage generatingcircuit, and the first substrate voltage generating circuit controls thesubstrate voltage of the third replica transistor so that a currentvalue of a current flowing in the third replica transistor becomes equalto a predetermined second target value.
 18. The semiconductor device asclaimed in claim 17, wherein the first substrate voltage generatingcircuit generates the substrate voltage of the third replica transistor,based on a difference between the current flowing in the third replicatransistor and the second target value.
 19. The semiconductor device asclaimed in claim 17, wherein the second voltage applying circuitcomprises a noninverting amplifier that includes ninth and tenth inputterminals and a fifth output terminal, the first substrate voltagegenerating circuit comprises a comparator that includes eleventh andtwelfth input terminals and a sixth output terminal, the semiconductordevice further comprises a second input voltage generating circuit thatgenerates an input voltage of the eleventh input terminal, the fifthoutput terminal and the twelfth input terminal are connected to eachother, the voltage of the first voltage value is input to the ninthinput terminal, the third replica transistor is inserted in a forwarddirection between the tenth input terminal and a ground, the secondinput voltage generating circuit generates a target value forcontrolling an output voltage of the fifth output terminal anddetermined by the second target value, and outputs the target value tothe eleventh input terminal, and the comparator in the first substratevoltage generating circuit generates the substrate voltage of the one ofthe first and second field effect transistors, based on the voltage thatis input to the eleventh input terminal and the output voltage of thefifth output terminal that is input to the twelfth input terminal, thecomparator outputting the substrate voltage from the sixth outputterminal.
 20. The semiconductor device as claimed in claim 19, whereinthe eleventh input terminal is a noninverting input terminal, and thetwelfth input terminal is an inverting input terminal.
 21. Thesemiconductor device as claimed in claim 17, wherein the first voltagevalue is a voltage value that creates an OFF state in which a channelregion of the third replica transistor is a weak inversion region. 22.The semiconductor device as claimed in claim 17, wherein the value ofthe current flowing in the third replica transistor is a current valueof a weak inversion region in which temperature characteristics arepositive temperature characteristics that become larger as temperaturebecomes higher, and a channel region of the third replica transistor hasan exponential change with respect to a change in the first voltagevalue.
 23. The semiconductor device as claimed in claim 17, furthercomprising: a second substrate voltage generating circuit that generatesa substrate voltage of the other one of the first and second fieldeffect transistors; a fourth replica transistor that is a replica of theother one of the first and second field effect transistors, the fourthreplica transistor being diode-connected; and a third voltage applyingcircuit that applies a voltage of a predetermined second voltage valuebetween an anode and cathode of the fourth replica transistor, wherein asubstrate voltage of the fourth replica transistor is the substratevoltage generated by the second substrate voltage generating circuit,and the second substrate voltage generating circuit controls thesubstrate voltage of the fourth replica transistor so that a currentvalue of a current flowing in the fourth replica transistor becomesequal to a given third target value.
 24. A semiconductor devicecomprising: a buffer circuit that generates a power-supply voltage of acomplementary field effect transistor circuit including a first fieldeffect transistor of a first conductivity type and a second field effecttransistor of a second conductivity type; a first replica transistorthat is a replica of the first field effect transistor, the firstreplica transistor being diode-connected; a second replica transistorthat is a replica of the second field effect transistor, the secondreplica transistor being diode-connected; a noninverting amplifier thatincludes first and second input terminals, a first output terminal, anda feedback resistor inserted between the first output terminal and thesecond input terminal; a comparator that includes third and fourth inputterminals and a second output terminal; and a first input voltagegenerating circuit that generates a voltage that appears in the firstoutput terminal when a total current value of currents flowing in thefirst and second replica transistors is equal to a predetermined firsttarget value, the first input voltage generating circuit outputting thevoltage to the third input terminal, wherein the first input terminaland the second output terminal are connected to each other, and thefirst output terminal and the fourth input terminal are connected toeach other, the first and second replica transistors are inserted in aforward direction and in parallel between the second input terminal anda ground, and the buffer circuit generates the power-supply voltage,with a target voltage being a voltage that is output from the secondoutput terminal.
 25. A semiconductor device comprising: a replicacircuit including first and second terminals, a first replica transistorof a first conductivity type and a second replica transistor of a secondconductivity type, the first replica transistor including a firstsource-drain path that is connected in parallel to a second source-drainpath of the second replica transistor between the first and secondterminals, the first replica transistor including a first gate connectedto the first terminal, and the second replica transistor including asecond gate connected to the second terminal; and a voltage controlcircuit configured to receive a current flowing through the replicacircuit to generate an internal voltage, wherein the voltage controlcircuit comprises a first amplifier including a first input node that iscoupled to the first terminal of the replica circuit, a second inputnode that is supplied with a first voltage related to the internalvoltage, a first output node, and a feedback circuit that is coupledbetween the first output node and the first input node.
 26. Thesemiconductor device as claimed in claim 25, wherein the second terminalis supplied with a ground voltage and the first terminal is connected tothe voltage control circuit.
 27. A semiconductor device comprising: areplica circuit including first and second terminals, a first replicatransistor of a first conductivity type and a second replica transistorof a second conductivity type, the first replica transistor including afirst source-drain path that is connected in parallel to a secondsource-drain path of the second replica transistor between the first andsecond terminals, the first replica transistor including a first gateconnected to the first terminal, and the second replica transistorincluding a second gate connected to the second terminal; and a voltagecontrol circuit configured to receive a current flowing through thereplica circuit to generate an internal voltage, wherein the secondterminal is supplied with a ground voltage and the first terminal isconnected to the voltage control circuit, wherein the voltage controlcircuit comprises: an amplifier circuit including a first input terminalwhich is supplied with a first voltage based on the current flowingthrough the replica circuit, a second input terminal which is suppliedwith a second voltage based on a predetermined current and an outputterminal which outputs the internal voltage, the amplifier circuitcontrolling the current of the replica circuit so as to become equal tothe predetermined current; and a voltage applier circuit connected tothe first terminal and outputting the first voltage to the first inputterminal of the amplifier circuit.
 28. The semiconductor device asclaimed in 27, wherein the voltage applier circuit includes: anadditional amplifier circuit including a third input terminal which issupplied with the internal voltage, a fourth input terminal which isconnected to the first terminal of the replica circuit and an additionaloutput terminal which outputs the first voltage; and a feedback resistorprovided between the fourth input terminal and the additional outputterminal.
 29. The semiconductor device as claimed in claim 28, whereinthe voltage control circuit further comprises an input voltage generatorcircuit generating the second voltage to the second input terminal ofthe amplifier circuit base on the predetermined current.
 30. Thesemiconductor device as claimed in claim 29, wherein the voltage controlcircuit further comprises: a first switch element provided between thefirst terminal of the replica circuit and the fourth input terminal ofthe additional amplifier circuit; a second switch element providedbetween the first input terminal of the amplifier circuit and theadditional output terminal of the additional amplifier circuit; and acapacitive element provided between the second switch element and thefirst input terminal of the amplifier circuit.
 31. The semiconductordevice as claimed in claim 25, wherein the current flowing through thereplica circuit increases as temperature drops.
 32. The device asclaimed in claim 25, wherein the feedback circuit comprises a resistor,the resistor being thereby coupled between the first output node and thefirst input node of the first amplifier.
 33. The device as claimed inclaim 32, wherein the voltage control circuit further comprises a secondamplifier including a third input node that is coupled to the firstoutput node of the first amplifier, a fourth input node that is suppliedwith a second voltage, and a second output node that is coupled to thesecond input node of the first amplifier.
 34. The device as claimed inclaim 25, further comprising a first switch circuit inserted between thefirst terminal of the replica circuit and the first input node of thefirst amplifier.
 35. The device as claimed in claim 34, wherein thefeedback circuit comprises a resistor, the resistor being therebycoupled between the first output node and the first input node of thefirst amplifier.
 36. The device as claimed in claim 35, wherein thevoltage control circuit further comprises a second amplifier including athird input node that is coupled to the first output node of the firstamplifier, a fourth input node that is supplied with a second voltage,and a second output node that is coupled to the second input node of thefirst amplifier, and wherein the device further comprises a secondswitch circuit inserted between the first output node of the firstamplifier and the third input node of the second amplifier.
 37. Thedevice as claimed in claim 25, wherein the feedback circuit comprises athird transistor that includes a gate coupled to the first output nodeof the first amplifier and a source-drain path coupled between the firstinput node of the first amplifier and a power supply line.
 38. Thedevice as claimed in claim 37, wherein the voltage control circuitfurther comprises: a circuit node coupled to the second input node ofthe first amplifier; a current mirror circuit including a current inputnode and a current output node that is coupled to the circuit node; anda current source coupled between the circuit node and the power supplyline, and wherein the first amplifier further comprises a fourthtransistor that includes a gate coupled to the first output node of thefirst amplifier and a source-drain path coupled between the power supplyline and the current input node of the current mirror circuit.
 39. Thedevice as claimed in claim 38, further comprising a first switch circuitinserted between the first terminal of the replica circuit and the firstinput node of the first amplifier and a second switch circuit insertedbetween the circuit node and the current output node of the currentmirror circuit.